<i>L</i>2₁ ordering of Co₂FeSn thin films promoted by high-temperature annealing

We report the effect of annealing on crystalline ordering and physical properties in thin films a nodal line semimetal candidate L2 1 -type Co 2 FeSn. The Co–Fe–Sn with composition Co:Fe:Sn ∼ 2:1:1 were deposited MgO(001) substrates at substrate temperature 150 °C by radio-frequency magnetron sputtering. as-deposited film showed x-ray diffraction patterns corresponding to B2 ordering. Annealing 600 700 after deposition resulted appearance (111) peak, which is characteristic Although anomalous Hall conductivity transverse thermoelectric decreased from those annealing-induced ordering, low °C-annealed was consistent theoretically estimated value. These results show significant influence electrical transport properties. process beneficial for studying exotic physics arising topological band features -ordered FeSn films.